KSD1691GS ON Semiconductor
auf Bestellung 1471 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 668+ | 0.8 EUR |
| 1000+ | 0.71 EUR |
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Technische Details KSD1691GS ON Semiconductor
Description: TRANS NPN 60V 5A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.3 W.
Weitere Produktangebote KSD1691GS nach Preis ab 0.6 EUR bis 2.45 EUR
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KSD1691GS | Hersteller : ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Case: TO126ISO Mounting: THT Power dissipation: 20W Collector current: 5A Pulsed collector current: 8A Type of transistor: NPN Collector-emitter voltage: 60V Polarisation: bipolar Current gain: 200...400 Kind of package: bulk |
auf Bestellung 1936 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD1691GS | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 1311 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD1691GS | Hersteller : onsemi |
Description: TRANS NPN 60V 5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
auf Bestellung 1056 Stücke: Lieferzeit 10-14 Tag (e) |
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