Technische Details KSD1691GS ON Semiconductor
Description: TRANS NPN 60V 5A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.3 W.
Weitere Produktangebote KSD1691GS nach Preis ab 0.71 EUR bis 3.01 EUR
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KSD1691GS | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO Mounting: THT Pulsed collector current: 8A Type of transistor: NPN Current gain: 200...400 Kind of package: bulk Case: TO126ISO Collector current: 5A Collector-emitter voltage: 60V Power dissipation: 20W Polarisation: bipolar |
auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD1691GS | onsemi |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 1301 Stücke: Lieferzeit 10-14 Tag (e) |
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KSD1691GS | onsemi |
Description: TRANS NPN 60V 5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.3 W |
auf Bestellung 1046 Stücke: Lieferzeit 10-14 Tag (e) |
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| KSD1691GS |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Pulsed collector current: 8A
Type of transistor: NPN
Current gain: 200...400
Kind of package: bulk
Case: TO126ISO
Collector current: 5A
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Pulsed collector current: 8A
Type of transistor: NPN
Current gain: 200...400
Kind of package: bulk
Case: TO126ISO
Collector current: 5A
Collector-emitter voltage: 60V
Power dissipation: 20W
Polarisation: bipolar
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.89 EUR |
| 57+ | 1.5 EUR |
| 66+ | 1.3 EUR |
| 80+ | 1.07 EUR |
| 106+ | 0.81 EUR |
| 500+ | 0.71 EUR |
| KSD1691GS |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Epitaxial Sil
Bipolar Transistors - BJT NPN Epitaxial Sil
auf Bestellung 1301 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.95 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.89 EUR |
| 4000+ | 0.87 EUR |
| KSD1691GS |
|
Hersteller: onsemi
Description: TRANS NPN 60V 5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
Description: TRANS NPN 60V 5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 12+ | 1.9 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.9 EUR |