KSD1691GSTU onsemi
Hersteller: onsemiDescription: TRANS NPN 60V 5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.3 W
auf Bestellung 2983 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 2.05 EUR |
| 16+ | 1.7 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 1920+ | 0.91 EUR |
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Technische Details KSD1691GSTU onsemi
Description: TRANS NPN 60V 5A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 1V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.3 W.
Weitere Produktangebote KSD1691GSTU nach Preis ab 0.83 EUR bis 2.06 EUR
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KSD1691GSTU | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT 60V 5A NPN BJT |
auf Bestellung 16654 Stücke: Lieferzeit 14-28 Tag (e) |
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KSD1691GSTU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
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| KSD1691GSTU | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Pulsed collector current: 8A Current gain: 200...400 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |