KSD363YTU onsemi / Fairchild
auf Bestellung 899 Stücke:
Lieferzeit 101-105 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.54 EUR |
| 10+ | 1.34 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.65 EUR |
| 5000+ | 0.62 EUR |
Produktrezensionen
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Technische Details KSD363YTU onsemi / Fairchild
Description: TRANS NPN 120V 6A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A, Current - Collector Cutoff (Max): 1mA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V, Frequency - Transition: 10MHz, Supplier Device Package: TO-220-3, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 40 W.
Weitere Produktangebote KSD363YTU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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KSD363YTU | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 120V 6A 40000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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KSD363YTU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 120V 6A 40000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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KSD363YTU | Hersteller : onsemi |
Description: TRANS NPN 120V 6A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 40 W |
Produkt ist nicht verfügbar |