KSP05TA onsemi / Fairchild
auf Bestellung 715 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
78+ | 0.67 EUR |
113+ | 0.46 EUR |
260+ | 0.2 EUR |
1000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details KSP05TA onsemi / Fairchild
Description: TRANS NPN 60V 0.5A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 625 mW.
Weitere Produktangebote KSP05TA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
KSP05TA | Hersteller : ON Semiconductor | Trans GP BJT NPN 60V 0.5A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
||
KSP05TA | Hersteller : ON Semiconductor | Trans GP BJT NPN 60V 0.5A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
||
KSP05TA | Hersteller : onsemi |
Description: TRANS NPN 60V 0.5A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
||
KSP05TA | Hersteller : onsemi |
Description: TRANS NPN 60V 0.5A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |