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LGD8201TH LITTELFUSE


LGD8201TH.pdf Hersteller: LITTELFUSE
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems
Application: ignition systems
Collector-emitter voltage: 400V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 125W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 2500 Stücke
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Technische Details LGD8201TH LITTELFUSE

Category: SMD IGBT transistors, Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems, Application: ignition systems, Collector-emitter voltage: 400V, Gate-emitter voltage: ±15V, Collector current: 20A, Pulsed collector current: 50A, Type of transistor: IGBT, Power dissipation: 125W, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate; logic level, Mounting: SMD, Case: DPAK, Anzahl je Verpackung: 2500 Stücke.

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LGD8201TH Hersteller : IXYS Description: DPAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 125 W
Produkt ist nicht verfügbar
LGD8201TH Hersteller : LITTELFUSE LGD8201TH.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems
Application: ignition systems
Collector-emitter voltage: 400V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 125W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar