LGD8201TH LITTELFUSE

Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 20A
Power dissipation: 125W
Case: DPAK
Gate-emitter voltage: ±15V
Pulsed collector current: 50A
Mounting: SMD
Kind of package: reel; tape
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Anzahl je Verpackung: 2500 Stücke
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Technische Details LGD8201TH LITTELFUSE
Category: SMD IGBT transistors, Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; Features: logic level; ESD, Type of transistor: IGBT, Collector-emitter voltage: 400V, Collector current: 20A, Power dissipation: 125W, Case: DPAK, Gate-emitter voltage: ±15V, Pulsed collector current: 50A, Mounting: SMD, Kind of package: reel; tape, Application: ignition systems, Version: ESD, Features of semiconductor devices: logic level, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote LGD8201TH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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LGD8201TH | Hersteller : IXYS |
Description: DPAK, IGBT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 50 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
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LGD8201TH | Hersteller : LITTELFUSE |
![]() Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 20A Power dissipation: 125W Case: DPAK Gate-emitter voltage: ±15V Pulsed collector current: 50A Mounting: SMD Kind of package: reel; tape Application: ignition systems Version: ESD Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |