LGE3D20065D LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.65V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 160A
Leakage current: 10µA
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
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Technische Details LGE3D20065D LUGUANG ELECTRONIC
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA, Case: TO247-3, Mounting: THT, Kind of package: tube, Max. forward voltage: 1.65V, Load current: 10A x2, Semiconductor structure: common cathode; double, Max. forward impulse current: 160A, Leakage current: 10µA, Type of diode: Schottky rectifying, Technology: SiC, Max. off-state voltage: 650V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3D20065D
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| LGE3D20065D | Hersteller : LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 1.65V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 160A Leakage current: 10µA Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |