LGE3D20065H LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Max. load current: 100A
Max. forward voltage: 1.7V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 110A
Leakage current: 0.25mA
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 650V
Anzahl je Verpackung: 1 Stücke
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Technische Details LGE3D20065H LUGUANG ELECTRONIC
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA, Case: TO247-2, Mounting: THT, Kind of package: tube, Max. load current: 100A, Max. forward voltage: 1.7V, Load current: 20A, Semiconductor structure: single diode, Max. forward impulse current: 110A, Leakage current: 0.25mA, Type of diode: Schottky rectifying, Technology: SiC, Max. off-state voltage: 650V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3D20065H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| LGE3D20065H | Hersteller : LUGUANG ELECTRONIC |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA Case: TO247-2 Mounting: THT Kind of package: tube Max. load current: 100A Max. forward voltage: 1.7V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 110A Leakage current: 0.25mA Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 650V |
Produkt ist nicht verfügbar |