Produkte > LUGUANG ELECTRONIC > LGE3D20120D

LGE3D20120D LUGUANG ELECTRONIC

LGE3D20120D.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 30µA
Max. forward voltage: 2V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details LGE3D20120D LUGUANG ELECTRONIC

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube, Case: TO247-3, Mounting: THT, Kind of package: tube, Type of diode: Schottky rectifying, Technology: SiC, Leakage current: 30µA, Max. forward voltage: 2V, Load current: 10A x2, Max. forward impulse current: 160A, Max. off-state voltage: 1.2kV, Semiconductor structure: common cathode; double.