LGE3D20120H LUGUANG ELECTRONIC

Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Max. load current: 100A
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
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Technische Details LGE3D20120H LUGUANG ELECTRONIC
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 20A, Semiconductor structure: single diode, Case: TO247-2, Max. forward voltage: 2V, Max. forward impulse current: 130A, Kind of package: tube, Max. load current: 100A, Leakage current: 50µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3D20120H
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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LGE3D20120H | Hersteller : LUGUANG ELECTRONIC |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 2V Max. forward impulse current: 130A Kind of package: tube Max. load current: 100A Leakage current: 50µA |
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