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LGE3D20120H LUGUANG ELECTRONIC

LGE3D20120H.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 100A
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
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Technische Details LGE3D20120H LUGUANG ELECTRONIC

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V, Type of diode: Schottky rectifying, Technology: SiC, Mounting: THT, Max. off-state voltage: 1.2kV, Load current: 20A, Semiconductor structure: single diode, Case: TO247-2, Max. forward voltage: 2V, Max. load current: 100A, Max. forward impulse current: 130A, Kind of package: tube, Leakage current: 50µA.