LGE3M20120Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 71A, Power dissipation: 428W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 39mΩ, Mounting: THT, Gate charge: 254nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.