LGE3M25120Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W, Mounting: THT, Case: TO247-4, Kind of package: tube, On-state resistance: 43mΩ, Power dissipation: 370W, Drain current: 60A, Pulsed drain current: 200A, Drain-source voltage: 1.2kV, Polarisation: unipolar, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -5...20V, Gate charge: 54nC, Anzahl je Verpackung: 1 Stücke.