LGE3M28065Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W, Mounting: THT, Case: TO247-4, Kind of package: tube, On-state resistance: 39mΩ, Power dissipation: 326W, Drain current: 67A, Pulsed drain current: 211A, Drain-source voltage: 650V, Polarisation: unipolar, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -4...18V, Gate charge: 163nC, Anzahl je Verpackung: 1 Stücke.