LGE3M30065B LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 326W
Drain current: 64A
Pulsed drain current: 212A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 147nC
Anzahl je Verpackung: 1 Stücke
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Technische Details LGE3M30065B LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W, Mounting: THT, Case: TO247-3, Kind of package: tube, On-state resistance: 55mΩ, Power dissipation: 326W, Drain current: 64A, Pulsed drain current: 212A, Drain-source voltage: 650V, Polarisation: unipolar, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Gate-source voltage: -5...20V, Gate charge: 147nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3M30065B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| LGE3M30065B | Hersteller : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W Mounting: THT Case: TO247-3 Kind of package: tube On-state resistance: 55mΩ Power dissipation: 326W Drain current: 64A Pulsed drain current: 212A Drain-source voltage: 650V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SiC Gate-source voltage: -5...20V Gate charge: 147nC |
Produkt ist nicht verfügbar |