LGE3M30065B LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W, Mounting: THT, Drain current: 64A, On-state resistance: 55mΩ, Type of transistor: N-MOSFET, Case: TO247-3, Power dissipation: 326W, Polarisation: unipolar, Kind of package: tube, Gate charge: 147nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 212A, Drain-source voltage: 650V, Anzahl je Verpackung: 1 Stücke.