LGE3M30065B LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Technology: SiC
Mounting: THT
Case: TO247-3
Kind of package: tube
Drain-source voltage: 650V
Drain current: 64A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 326W
Polarisation: unipolar
Gate charge: 147nC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 212A
Anzahl je Verpackung: 1 Stücke
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Technische Details LGE3M30065B LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W, Technology: SiC, Mounting: THT, Case: TO247-3, Kind of package: tube, Drain-source voltage: 650V, Drain current: 64A, On-state resistance: 55mΩ, Type of transistor: N-MOSFET, Power dissipation: 326W, Polarisation: unipolar, Gate charge: 147nC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 212A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3M30065B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| LGE3M30065B | Hersteller : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W Technology: SiC Mounting: THT Case: TO247-3 Kind of package: tube Drain-source voltage: 650V Drain current: 64A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 326W Polarisation: unipolar Gate charge: 147nC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 212A |
Produkt ist nicht verfügbar |