LGE3M30065Q LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Drain current: 54A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Case: TO247-4
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 170A
Drain-source voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Drain current: 54A
On-state resistance: 45mΩ
Type of transistor: N-MOSFET
Case: TO247-4
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 170A
Drain-source voltage: 650V
Anzahl je Verpackung: 1 Stücke
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Technische Details LGE3M30065Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W, Mounting: THT, Drain current: 54A, On-state resistance: 45mΩ, Type of transistor: N-MOSFET, Case: TO247-4, Power dissipation: 300W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 170A, Drain-source voltage: 650V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3M30065Q
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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LGE3M30065Q | Hersteller : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W Mounting: THT Drain current: 54A On-state resistance: 45mΩ Type of transistor: N-MOSFET Case: TO247-4 Power dissipation: 300W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 170A Drain-source voltage: 650V |
Produkt ist nicht verfügbar |