LGE3M30065Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W, Technology: SiC, Mounting: THT, Case: TO247-4, Kind of package: tube, Drain-source voltage: 650V, Drain current: 54A, On-state resistance: 45mΩ, Type of transistor: N-MOSFET, Power dissipation: 300W, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Kind of channel: enhancement, Gate-source voltage: -5...20V, Pulsed drain current: 170A, Anzahl je Verpackung: 1 Stücke.