LGE3M35065Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 40A, Pulsed drain current: 130A, Power dissipation: 370W, Case: TO247-4, Gate-source voltage: -5...18V, On-state resistance: 55mΩ, Mounting: THT, Gate charge: 30nC, Features of semiconductor devices: Kelvin terminal, Kind of channel: enhancement, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.