LGE3M35065Q LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 30nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...18V
Pulsed drain current: 130A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 30nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...18V
Pulsed drain current: 130A
Mounting: THT
Case: TO247-4
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 55mΩ
Type of transistor: N-MOSFET
Power dissipation: 370W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details LGE3M35065Q LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 30nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -5...18V, Pulsed drain current: 130A, Mounting: THT, Case: TO247-4, Drain-source voltage: 650V, Drain current: 40A, On-state resistance: 55mΩ, Type of transistor: N-MOSFET, Power dissipation: 370W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3M35065Q
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
LGE3M35065Q | Hersteller : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 30nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...18V Pulsed drain current: 130A Mounting: THT Case: TO247-4 Drain-source voltage: 650V Drain current: 40A On-state resistance: 55mΩ Type of transistor: N-MOSFET Power dissipation: 370W |
Produkt ist nicht verfügbar |