LGE3M40065B LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58A
Pulsed drain current: 180A
Power dissipation: 348W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110.8nC
Kind of channel: enhancement
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
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Technische Details LGE3M40065B LUGUANG ELECTRONIC
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 58A, Pulsed drain current: 180A, Power dissipation: 348W, Case: TO247-3, Gate-source voltage: -5...20V, On-state resistance: 55mΩ, Mounting: THT, Gate charge: 110.8nC, Kind of channel: enhancement, Kind of package: tube, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGE3M40065B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| LGE3M40065B | Hersteller : LUGUANG ELECTRONIC |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 58A Pulsed drain current: 180A Power dissipation: 348W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 55mΩ Mounting: THT Gate charge: 110.8nC Kind of channel: enhancement Kind of package: tube |
Produkt ist nicht verfügbar |