LGE3M40065Q LUGUANG ELECTRONIC

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 110.8nC, Technology: SiC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 180A, Mounting: THT, Case: TO247-4, Drain-source voltage: 650V, Drain current: 58A, On-state resistance: 55mΩ, Type of transistor: N-MOSFET, Power dissipation: 348W, Anzahl je Verpackung: 1 Stücke.