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LGEGB15N65T2 LUGUANG ELECTRONIC

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Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Features of semiconductor devices: integrated anti-parallel diode

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Technische Details LGEGB15N65T2 LUGUANG ELECTRONIC

Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 125W; TO263, Type of transistor: IGBT, Power dissipation: 125W, Case: TO263, Mounting: SMD, Gate charge: 45nC, Kind of package: reel; tape, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Collector-emitter voltage: 650V, Turn-on time: 40ns, Turn-off time: 150ns, Collector current: 15A, Features of semiconductor devices: integrated anti-parallel diode.