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LGEGB15N65T2 LUGUANG ELECTRONIC


LGEGx15N65.pdf
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 650V
Power dissipation: 125W
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
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Technische Details LGEGB15N65T2 LUGUANG ELECTRONIC

Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 125W; TO263, Type of transistor: IGBT, Case: TO263, Mounting: SMD, Kind of package: reel; tape, Pulsed collector current: 60A, Turn-on time: 40ns, Turn-off time: 150ns, Gate-emitter voltage: ±20V, Collector current: 15A, Collector-emitter voltage: 650V, Power dissipation: 125W, Gate charge: 45nC, Features of semiconductor devices: integrated anti-parallel diode.