LGEGB15N65T2 LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Turn-off time: 150ns
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Turn-on time: 40ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 627 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 103+ | 0.7 EUR |
| 115+ | 0.62 EUR |
| 124+ | 0.58 EUR |
| 400+ | 0.54 EUR |
| 800+ | 0.53 EUR |
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Technische Details LGEGB15N65T2 LUGUANG ELECTRONIC
Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 125W; TO263, Type of transistor: IGBT, Power dissipation: 125W, Case: TO263, Mounting: SMD, Gate charge: 45nC, Kind of package: reel; tape, Features of semiconductor devices: integrated anti-parallel diode, Collector current: 15A, Gate-emitter voltage: ±20V, Turn-off time: 150ns, Pulsed collector current: 60A, Collector-emitter voltage: 650V, Turn-on time: 40ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGB15N65T2 nach Preis ab 0.54 EUR bis 0.79 EUR
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LGEGB15N65T2 | Hersteller : LUGUANG ELECTRONIC |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Turn-off time: 150ns Pulsed collector current: 60A Collector-emitter voltage: 650V Turn-on time: 40ns |
auf Bestellung 627 Stücke: Lieferzeit 14-21 Tag (e) |
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