LGEGB15N65T2 LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 621 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 112+ | 0.64 EUR |
| 121+ | 0.59 EUR |
| 400+ | 0.56 EUR |
| 800+ | 0.55 EUR |
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Technische Details LGEGB15N65T2 LUGUANG ELECTRONIC
Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 125W; TO263, Type of transistor: IGBT, Power dissipation: 125W, Case: TO263, Mounting: SMD, Gate charge: 45nC, Kind of package: reel; tape, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 40ns, Turn-off time: 150ns, Collector current: 15A, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGB15N65T2 nach Preis ab 0.56 EUR bis 0.8 EUR
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LGEGB15N65T2 | Hersteller : LUGUANG ELECTRONIC |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 40ns Turn-off time: 150ns Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
auf Bestellung 621 Stücke: Lieferzeit 14-21 Tag (e) |
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