Produkte > LUGUANG ELECTRONIC > LGEGB15N65T2
LGEGB15N65T2

LGEGB15N65T2 LUGUANG ELECTRONIC

pVersion=0046&contRep=ZT&docId=005056AB281E1FD098F724680BA880E1&compId=LGEGx15N65.pdf?ci_sign=32af96eaa5e0f11447ba545de133a895eb50538e Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
125+0.57 EUR
133+0.54 EUR
800+0.52 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details LGEGB15N65T2 LUGUANG ELECTRONIC

Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 125W; TO263, Type of transistor: IGBT, Power dissipation: 125W, Case: TO263, Mounting: SMD, Gate charge: 45nC, Kind of package: reel; tape, Collector current: 15A, Gate-emitter voltage: ±20V, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 60A, Turn-on time: 40ns, Collector-emitter voltage: 650V, Turn-off time: 150ns.