LGEGF15N65T2 LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 112+ | 0.64 EUR |
| 121+ | 0.59 EUR |
| 250+ | 0.56 EUR |
| 1000+ | 0.54 EUR |
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Technische Details LGEGF15N65T2 LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP, Type of transistor: IGBT, Power dissipation: 30.6W, Case: TO220FP, Mounting: THT, Gate charge: 45nC, Kind of package: tube, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 40ns, Turn-off time: 150ns, Collector current: 15A, Gate-emitter voltage: ±20V, Pulsed collector current: 60A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGF15N65T2 nach Preis ab 0.59 EUR bis 0.8 EUR
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LGEGF15N65T2 | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Power dissipation: 30.6W Case: TO220FP Mounting: THT Gate charge: 45nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 40ns Turn-off time: 150ns Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
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