LGEGF15N65T2 LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 181 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 93+ | 0.77 EUR |
| 103+ | 0.7 EUR |
| 117+ | 0.62 EUR |
| 125+ | 0.57 EUR |
| 250+ | 0.54 EUR |
| 1000+ | 0.53 EUR |
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Technische Details LGEGF15N65T2 LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP, Type of transistor: IGBT, Power dissipation: 30.6W, Case: TO220FP, Mounting: THT, Gate charge: 45nC, Kind of package: tube, Collector current: 15A, Gate-emitter voltage: ±20V, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 60A, Turn-on time: 40ns, Collector-emitter voltage: 650V, Turn-off time: 150ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGF15N65T2 nach Preis ab 0.57 EUR bis 0.77 EUR
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LGEGF15N65T2 | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Power dissipation: 30.6W Case: TO220FP Mounting: THT Gate charge: 45nC Kind of package: tube Collector current: 15A Gate-emitter voltage: ±20V Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 60A Turn-on time: 40ns Collector-emitter voltage: 650V Turn-off time: 150ns |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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