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LGEGW100N65FP

LGEGW100N65FP LUGUANG ELECTRONIC

LGEGW100N65FP.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 375ns
Gate charge: 135nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
Turn-on time: 205ns
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Technische Details LGEGW100N65FP LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 100A, Power dissipation: 500W, Case: TO247PLUS, Gate-emitter voltage: ±20V, Mounting: THT, Kind of package: tube, Turn-off time: 375ns, Gate charge: 135nC, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 300A, Turn-on time: 205ns.