LGEGW20N65SEK LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.86 EUR |
| 42+ | 1.73 EUR |
| 120+ | 1.62 EUR |
| 240+ | 1.57 EUR |
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Technische Details LGEGW20N65SEK LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 82W; TO247, Type of transistor: IGBT, Power dissipation: 82W, Case: TO247, Mounting: THT, Kind of package: tube, Collector current: 20A, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 74ns, Gate charge: 82nC, Turn-off time: 232ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW20N65SEK nach Preis ab 1.62 EUR bis 2.35 EUR
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LGEGW20N65SEK | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 20A; 82W; TO247 Type of transistor: IGBT Power dissipation: 82W Case: TO247 Mounting: THT Kind of package: tube Collector current: 20A Gate-emitter voltage: ±30V Pulsed collector current: 80A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 74ns Gate charge: 82nC Turn-off time: 232ns |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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