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LGEGW20N65SEK

LGEGW20N65SEK LUGUANG ELECTRONIC


pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EAC9DBB7DB80DF&compId=LGEGW20N65SEK.pdf?ci_sign=f1bb955e3d23fffc73018e47e81a2311210d6ead Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
auf Bestellung 150 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.37 EUR
34+2.13 EUR
42+1.73 EUR
44+1.63 EUR
Mindestbestellmenge: 31
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Technische Details LGEGW20N65SEK LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 20A; 82W; TO247, Type of transistor: IGBT, Power dissipation: 82W, Case: TO247, Mounting: THT, Kind of package: tube, Collector current: 20A, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 74ns, Gate charge: 82nC, Turn-off time: 232ns.