LGEGW25N120S LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 2.83 EUR |
| 29+ | 2.55 EUR |
| 32+ | 2.25 EUR |
| 35+ | 2.09 EUR |
| 120+ | 1.94 EUR |
| 240+ | 1.9 EUR |
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Technische Details LGEGW25N120S LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247, Type of transistor: IGBT, Power dissipation: 100W, Case: TO247, Mounting: THT, Gate charge: 130nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 57ns, Turn-off time: 460ns, Collector current: 25A, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Collector-emitter voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW25N120S nach Preis ab 2.09 EUR bis 2.83 EUR
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LGEGW25N120S | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247 Type of transistor: IGBT Power dissipation: 100W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 57ns Turn-off time: 460ns Collector current: 25A Gate-emitter voltage: ±30V Pulsed collector current: 80A Collector-emitter voltage: 1.2kV |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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