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LGEGW25N120S LUGUANG ELECTRONIC


LGEGW25N120S.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Collector current: 25A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Turn-off time: 460ns
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 100W
Gate charge: 130nC
Type of transistor: IGBT
Turn-on time: 57ns
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Technische Details LGEGW25N120S LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247, Collector current: 25A, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Features of semiconductor devices: integrated anti-parallel diode, Kind of package: tube, Turn-off time: 460ns, Mounting: THT, Collector-emitter voltage: 1.2kV, Power dissipation: 100W, Gate charge: 130nC, Type of transistor: IGBT, Turn-on time: 57ns.