LGEGW25N120S LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.87 EUR |
| 28+ | 2.59 EUR |
| 32+ | 2.27 EUR |
| 34+ | 2.12 EUR |
| 120+ | 1.97 EUR |
| 240+ | 1.93 EUR |
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Technische Details LGEGW25N120S LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 25A, Power dissipation: 100W, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 80A, Mounting: THT, Gate charge: 130nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 57ns, Turn-off time: 460ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW25N120S nach Preis ab 2.12 EUR bis 2.87 EUR
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LGEGW25N120S | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 100W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 80A Mounting: THT Gate charge: 130nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 57ns Turn-off time: 460ns |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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