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LGEGW40N120TS LUGUANG ELECTRONIC

pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D5A343C32320DF&compId=LGEGW40N120TS.pdf?ci_sign=2515977ba6ffd0ff6662addc9640a15f1d6aaa84

Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 121ns

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Technische Details LGEGW40N120TS LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247, Type of transistor: IGBT, Power dissipation: 300W, Case: TO247, Mounting: THT, Gate charge: 0.21µC, Kind of package: tube, Turn-off time: 310ns, Gate-emitter voltage: ±30V, Collector current: 40A, Pulsed collector current: 120A, Collector-emitter voltage: 1.2kV, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 121ns.