LGEGW40N65F1 LUGUANG ELECTRONIC

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
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Technische Details LGEGW40N65F1 LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 40A; 94W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 40A, Power dissipation: 94W, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 120A, Mounting: THT, Gate charge: 83nC, Kind of package: tube, Turn-on time: 96ns, Turn-off time: 187ns, Features of semiconductor devices: integrated anti-parallel diode.