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LGEGW50N65SEK

LGEGW50N65SEK LUGUANG ELECTRONIC

LGEGW50N65SEK.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate charge: 200nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Turn-on time: 137ns
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Technische Details LGEGW50N65SEK LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 166W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 166W, Case: TO247, Gate-emitter voltage: ±30V, Mounting: THT, Kind of package: tube, Turn-off time: 331ns, Gate charge: 200nC, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 200A, Turn-on time: 137ns.