LGEGW50N65SEU LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
| Anzahl | Preis |
|---|---|
| 25+ | 2.97 EUR |
| 27+ | 2.67 EUR |
| 31+ | 2.36 EUR |
| 33+ | 2.19 EUR |
| 120+ | 2.06 EUR |
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Technische Details LGEGW50N65SEU LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 50A; 166W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 50A, Power dissipation: 166W, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 200A, Mounting: THT, Gate charge: 200nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 137ns, Turn-off time: 331ns.