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LGEGW60N65SEU

LGEGW60N65SEU LUGUANG ELECTRONIC

LGEGW60N65SEU.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 151W
Case: TO247
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 256ns
Gate charge: 0.21µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 240A
Turn-on time: 123ns
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Technische Details LGEGW60N65SEU LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 60A; 151W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 60A, Power dissipation: 151W, Case: TO247, Gate-emitter voltage: ±20V, Mounting: THT, Kind of package: tube, Turn-off time: 256ns, Gate charge: 0.21µC, Features of semiconductor devices: integrated anti-parallel diode, Pulsed collector current: 240A, Turn-on time: 123ns.