LGEGW60N65SEU LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Power dissipation: 151W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 123ns
Turn-off time: 256ns
Gate-emitter voltage: ±20V
Collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 3.32 EUR |
| 24+ | 2.99 EUR |
| 28+ | 2.65 EUR |
| 30+ | 2.46 EUR |
| 120+ | 2.33 EUR |
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Technische Details LGEGW60N65SEU LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 60A; 151W; TO247, Type of transistor: IGBT, Power dissipation: 151W, Case: TO247, Mounting: THT, Gate charge: 0.21µC, Kind of package: tube, Pulsed collector current: 240A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 123ns, Turn-off time: 256ns, Gate-emitter voltage: ±20V, Collector current: 60A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW60N65SEU nach Preis ab 2.33 EUR bis 3.32 EUR
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LGEGW60N65SEU | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Power dissipation: 151W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 123ns Turn-off time: 256ns Gate-emitter voltage: ±20V Collector current: 60A |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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