
LGEGW60N65SEU LUGUANG ELECTRONIC

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 151W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
21+ | 3.47 EUR |
23+ | 3.12 EUR |
29+ | 2.55 EUR |
30+ | 2.4 EUR |
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Technische Details LGEGW60N65SEU LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 60A; 151W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 60A, Power dissipation: 151W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 240A, Mounting: THT, Gate charge: 0.21µC, Kind of package: tube, Turn-on time: 123ns, Turn-off time: 256ns, Features of semiconductor devices: integrated anti-parallel diode.