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LGEGW60N65SEU

LGEGW60N65SEU LUGUANG ELECTRONIC


pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D55FCBD4FC00DF&compId=LGEGW60N65SEU.pdf?ci_sign=70d49fdb0691e0ba94e987387f0bcf579731a287 Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 151W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 256ns
Features of semiconductor devices: integrated anti-parallel diode
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Lieferzeit 14-21 Tag (e)
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23+3.12 EUR
29+2.55 EUR
30+2.4 EUR
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Technische Details LGEGW60N65SEU LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 60A; 151W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 60A, Power dissipation: 151W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 240A, Mounting: THT, Gate charge: 0.21µC, Kind of package: tube, Turn-on time: 123ns, Turn-off time: 256ns, Features of semiconductor devices: integrated anti-parallel diode.