LGEGW60N65SEU LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 3.4 EUR |
| 24+ | 3.06 EUR |
| 27+ | 2.72 EUR |
| 30+ | 2.52 EUR |
| 120+ | 2.36 EUR |
| 240+ | 2.3 EUR |
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Technische Details LGEGW60N65SEU LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 60A; 151W; TO247, Type of transistor: IGBT, Case: TO247, Mounting: THT, Kind of package: tube, Gate-emitter voltage: ±20V, Power dissipation: 151W, Collector current: 60A, Pulsed collector current: 240A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 0.21µC, Turn-on time: 123ns, Turn-off time: 256ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW60N65SEU nach Preis ab 2.52 EUR bis 3.4 EUR
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LGEGW60N65SEU | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 151W Collector current: 60A Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Turn-on time: 123ns Turn-off time: 256ns |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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