LGEGW75N65F LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.43 EUR |
| 18+ | 4 EUR |
| 21+ | 3.52 EUR |
| 30+ | 3.29 EUR |
| 120+ | 3.06 EUR |
| 240+ | 3 EUR |
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Technische Details LGEGW75N65F LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 71W; TO247, Type of transistor: IGBT, Power dissipation: 71W, Case: TO247, Mounting: THT, Gate charge: 192nC, Kind of package: tube, Turn-off time: 274ns, Turn-on time: 161ns, Features of semiconductor devices: integrated anti-parallel diode, Collector current: 75A, Gate-emitter voltage: ±30V, Pulsed collector current: 300A, Collector-emitter voltage: 650V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW75N65F nach Preis ab 3.06 EUR bis 4.43 EUR
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LGEGW75N65F | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Power dissipation: 71W Case: TO247 Mounting: THT Gate charge: 192nC Kind of package: tube Turn-off time: 274ns Turn-on time: 161ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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