LGEGW75N65F LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 192nC
Turn-on time: 161ns
Turn-off time: 274ns
Power dissipation: 71W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.45 EUR |
| 18+ | 4.02 EUR |
| 21+ | 3.55 EUR |
| 30+ | 3.3 EUR |
| 120+ | 3.07 EUR |
| 240+ | 3.02 EUR |
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Technische Details LGEGW75N65F LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 71W; TO247, Type of transistor: IGBT, Case: TO247, Mounting: THT, Kind of package: tube, Collector current: 75A, Gate-emitter voltage: ±30V, Pulsed collector current: 300A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Gate charge: 192nC, Turn-on time: 161ns, Turn-off time: 274ns, Power dissipation: 71W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW75N65F nach Preis ab 3.07 EUR bis 4.45 EUR
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LGEGW75N65F | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 192nC Turn-on time: 161ns Turn-off time: 274ns Power dissipation: 71W |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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