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LGEGW75N65F LUGUANG ELECTRONIC

pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D5662C38B000DF&compId=LGEGW75N65F.pdf?ci_sign=8e2d7dc03b7c2dd188e1820e576a0115bba7b380

Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±30V
Turn-off time: 274ns
Turn-on time: 161ns
Collector-emitter voltage: 650V
Pulsed collector current: 300A

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Technische Details LGEGW75N65F LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 71W; TO247, Type of transistor: IGBT, Power dissipation: 71W, Case: TO247, Mounting: THT, Gate charge: 192nC, Kind of package: tube, Collector current: 75A, Features of semiconductor devices: integrated anti-parallel diode, Gate-emitter voltage: ±30V, Turn-off time: 274ns, Turn-on time: 161ns, Collector-emitter voltage: 650V, Pulsed collector current: 300A.