LGEGW75N65FP LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 500W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 225ns
Turn-on time: 215ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.65 EUR |
| 18+ | 4.2 EUR |
| 20+ | 3.7 EUR |
| 30+ | 3.45 EUR |
| 120+ | 3.22 EUR |
| 240+ | 3.12 EUR |
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Technische Details LGEGW75N65FP LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 500W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 75A, Power dissipation: 500W, Case: TO247, Gate-emitter voltage: ±20V, Pulsed collector current: 225A, Mounting: THT, Gate charge: 130nC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Turn-off time: 225ns, Turn-on time: 215ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW75N65FP nach Preis ab 3.12 EUR bis 4.65 EUR
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LGEGW75N65FP | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 500W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 130nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-off time: 225ns Turn-on time: 215ns |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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