Produkte > LUGUANG ELECTRONIC > LGEGW75N65FP

LGEGW75N65FP LUGUANG ELECTRONIC

pVersion=0046&contRep=ZT&docId=005056AB281E1FD098F73B7F2EC840E1&compId=LGEGW75N65FP.pdf?ci_sign=24299b571d17b2b0aaf072aeb1e60a71979dc684

Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Turn-off time: 225ns
Turn-on time: 215ns
Collector-emitter voltage: 650V
Pulsed collector current: 225A

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details LGEGW75N65FP LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 500W; TO247, Type of transistor: IGBT, Power dissipation: 500W, Case: TO247, Mounting: THT, Gate charge: 130nC, Kind of package: tube, Collector current: 75A, Features of semiconductor devices: integrated anti-parallel diode, Gate-emitter voltage: ±20V, Turn-off time: 225ns, Turn-on time: 215ns, Collector-emitter voltage: 650V, Pulsed collector current: 225A.