LGEGW75N65S LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 114 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.52 EUR |
| 18+ | 4.08 EUR |
| 20+ | 3.6 EUR |
| 30+ | 3.35 EUR |
| 120+ | 3.13 EUR |
| 240+ | 3.03 EUR |
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Technische Details LGEGW75N65S LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 250W; TO247, Type of transistor: IGBT, Power dissipation: 250W, Case: TO247, Mounting: THT, Gate charge: 340nC, Kind of package: tube, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode, Turn-on time: 156ns, Turn-off time: 348ns, Collector current: 75A, Gate-emitter voltage: ±30V, Pulsed collector current: 300A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW75N65S nach Preis ab 3.35 EUR bis 4.52 EUR
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LGEGW75N65S | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 156ns Turn-off time: 348ns Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A |
auf Bestellung 114 Stücke: Lieferzeit 14-21 Tag (e) |
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