LGEGW75N65S LUGUANG ELECTRONIC
Hersteller: LUGUANG ELECTRONICCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±30V
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 148 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.39 EUR |
| 19+ | 3.96 EUR |
| 21+ | 3.49 EUR |
| 30+ | 3.25 EUR |
| 120+ | 3.05 EUR |
| 240+ | 2.99 EUR |
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Technische Details LGEGW75N65S LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 250W; TO247, Type of transistor: IGBT, Power dissipation: 250W, Case: TO247, Mounting: THT, Gate charge: 340nC, Kind of package: tube, Pulsed collector current: 300A, Collector-emitter voltage: 650V, Gate-emitter voltage: ±30V, Turn-on time: 156ns, Turn-off time: 348ns, Collector current: 75A, Features of semiconductor devices: integrated anti-parallel diode, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote LGEGW75N65S nach Preis ab 3.05 EUR bis 4.39 EUR
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LGEGW75N65S | Hersteller : LUGUANG ELECTRONIC |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Pulsed collector current: 300A Collector-emitter voltage: 650V Gate-emitter voltage: ±30V Turn-on time: 156ns Turn-off time: 348ns Collector current: 75A Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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