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LGEGW75N65S

LGEGW75N65S LUGUANG ELECTRONIC

LGEGW75N65S.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 156ns
Turn-off time: 348ns
Features of semiconductor devices: integrated anti-parallel diode
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Technische Details LGEGW75N65S LUGUANG ELECTRONIC

Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 250W; TO247, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 75A, Power dissipation: 250W, Case: TO247, Gate-emitter voltage: ±30V, Pulsed collector current: 300A, Mounting: THT, Gate charge: 340nC, Kind of package: tube, Turn-on time: 156ns, Turn-off time: 348ns, Features of semiconductor devices: integrated anti-parallel diode.