
LGEGW75N65S LUGUANG ELECTRONIC

Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
16+ | 4.49 EUR |
18+ | 4.05 EUR |
22+ | 3.27 EUR |
24+ | 3.09 EUR |
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Technische Details LGEGW75N65S LUGUANG ELECTRONIC
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 75A; 250W; TO247, Type of transistor: IGBT, Power dissipation: 250W, Case: TO247, Mounting: THT, Gate charge: 340nC, Kind of package: tube, Turn-off time: 348ns, Turn-on time: 156ns, Features of semiconductor devices: integrated anti-parallel diode, Collector current: 75A, Gate-emitter voltage: ±30V, Pulsed collector current: 300A, Collector-emitter voltage: 650V.