
LM5102SDX/NOPB Texas Instruments
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
4500+ | 1.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details LM5102SDX/NOPB Texas Instruments
Description: IC GATE DRVR HALF-BRIDGE 10WSON, Packaging: Tape & Reel (TR), Package / Case: 10-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 9V ~ 14V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 118 V, Supplier Device Package: 10-WSON (4x4), Rise / Fall Time (Typ): 600ns, 600ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2.2V, Current - Peak Output (Source, Sink): 1.6A, 1.6A, Part Status: Active, DigiKey Programmable: Not Verified.
Weitere Produktangebote LM5102SDX/NOPB
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
LM5102SDX/NOPB | Hersteller : Texas Instruments |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
LM5102SDX/NOPB | Hersteller : Texas Instruments |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
LM5102SDX/NOPB | Hersteller : Texas Instruments |
![]() |
Produkt ist nicht verfügbar |
|
LM5102SDX/NOPB | Hersteller : TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.6A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Output current: -1.8...1.6A Case: WSON10 Mounting: SMD Number of channels: 2 Operating temperature: -40...125°C Supply voltage: 9...14V DC Impulse rise time: 600ns Pulse fall time: 600ns Protection: undervoltage UVP Anzahl je Verpackung: 4500 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
LM5102SDX/NOPB | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 600ns, 600ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 1.6A, 1.6A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|
![]() |
LM5102SDX/NOPB | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 10-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9V ~ 14V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118 V Supplier Device Package: 10-WSON (4x4) Rise / Fall Time (Typ): 600ns, 600ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 1.6A, 1.6A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
|
![]() |
LM5102SDX/NOPB | Hersteller : Texas Instruments |
![]() |
Produkt ist nicht verfügbar |
|
LM5102SDX/NOPB | Hersteller : TEXAS INSTRUMENTS |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; WSON10; -1.8÷1.6A Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Output current: -1.8...1.6A Case: WSON10 Mounting: SMD Number of channels: 2 Operating temperature: -40...125°C Supply voltage: 9...14V DC Impulse rise time: 600ns Pulse fall time: 600ns Protection: undervoltage UVP |
Produkt ist nicht verfügbar |