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LMG3522R030QRQSTQ1

LMG3522R030QRQSTQ1 Texas Instruments


lmg3522r030-q1.pdf?ts=1695191528363&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252Fde-de%252FLMG3522R030-Q1 Hersteller: Texas Instruments
Description: MOSFET IPM 650V 55A 52-VQFN
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 52-VQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge Inverter
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 26mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Current - Output (Max): 38A
Ratio - Input:Output: 1:1
Supplier Device Package: 52-VQFN (12x12)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Current: 55 A
Voltage: 650 V
Qualification: AEC-Q100
auf Bestellung 250 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+36.53 EUR
Mindestbestellmenge: 250
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Technische Details LMG3522R030QRQSTQ1 Texas Instruments

Description: MOSFET IPM 650V 55A 52-VQFN, Features: Slew Rate Controlled, Status Flag, Packaging: Tape & Reel (TR), Package / Case: 52-VQFN Exposed Pad, Output Type: N-Channel, Mounting Type: Surface Mount, Wettable Flank, Number of Outputs: 1, Interface: PWM, Type: MOSFET, Configuration: Half Bridge Inverter, Switch Type: General Purpose, Operating Temperature: -40°C ~ 125°C (TA), Output Configuration: Low Side, Rds On (Typ): 26mOhm, Input Type: Non-Inverting, Voltage - Load: 650V, Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V, Current - Output (Max): 38A, Ratio - Input:Output: 1:1, Supplier Device Package: 52-VQFN (12x12), Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO, Grade: Automotive, Current: 55 A, Voltage: 650 V, Qualification: AEC-Q100.

Weitere Produktangebote LMG3522R030QRQSTQ1 nach Preis ab 37.21 EUR bis 53.94 EUR

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LMG3522R030QRQSTQ1 LMG3522R030QRQSTQ1 Hersteller : Texas Instruments lmg3522r030-q1.pdf?ts=1695191528363&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252Fde-de%252FLMG3522R030-Q1 Description: MOSFET IPM 650V 55A 52-VQFN
Features: Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 52-VQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge Inverter
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 26mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Current - Output (Max): 38A
Ratio - Input:Output: 1:1
Supplier Device Package: 52-VQFN (12x12)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Current: 55 A
Voltage: 650 V
Qualification: AEC-Q100
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+52.94 EUR
10+43.03 EUR
25+40.55 EUR
100+37.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
LMG3522R030QRQSTQ1 LMG3522R030QRQSTQ1 Hersteller : Texas Instruments lmg3522r030-q1.pdf?ts=1695191528363&ref_url=https%253A%252F%252Fwww.ti.com%252Fproduct%252Fde-de%252FLMG3522R030-Q1 Gate Drivers Automotive 650-V 30- m? GaN FET with inte
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+53.94 EUR
10+43.84 EUR
25+41.32 EUR
100+38.54 EUR
250+37.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH