LMG3522R030QRQSTQ1 Texas Instruments
Hersteller: Texas InstrumentsGate Drivers Automotive 650-V 30-m? GaN FET with integrated driver, protection and temperature reporting 52-VQFN -40 to 150
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 59.59 EUR |
| 10+ | 48.44 EUR |
| 25+ | 45.65 EUR |
| 100+ | 42.59 EUR |
| 250+ | 41.1 EUR |
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Technische Details LMG3522R030QRQSTQ1 Texas Instruments
Description: AUTOMOTIVE 650-V 30-M GAN FET WI, Packaging: Tape & Reel (TR), Features: Slew Rate Controlled, Status Flag, Package / Case: 52-VQFN Exposed Pad, Output Type: N-Channel, Mounting Type: Surface Mount, Wettable Flank, Number of Outputs: 1, Interface: PWM, Switch Type: General Purpose, Operating Temperature: -40°C ~ 125°C (TA), Output Configuration: Low Side, Rds On (Typ): 26mOhm, Input Type: Non-Inverting, Voltage - Load: 650V, Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V, Current - Output (Max): 38A, Ratio - Input:Output: 1:1, Supplier Device Package: 52-VQFN (12x12), Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO, Grade: Automotive, Qualification: AEC-Q100, Type: MOSFET, Configuration: Half Bridge Inverter, Current: 55 A, Voltage: 650 V.
Weitere Produktangebote LMG3522R030QRQSTQ1 nach Preis ab 42.73 EUR bis 59.8 EUR
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LMG3522R030QRQSTQ1 | Hersteller : Texas Instruments |
Description: AUTOMOTIVE 650-V 30-M GAN FET WI Packaging: Cut Tape (CT) Features: Slew Rate Controlled, Status Flag Package / Case: 52-VQFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 26mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V Current - Output (Max): 38A Ratio - Input:Output: 1:1 Supplier Device Package: 52-VQFN (12x12) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 Type: MOSFET Configuration: Half Bridge Inverter Current: 55 A Voltage: 650 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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LMG3522R030QRQSTQ1 | Hersteller : Texas Instruments |
Description: AUTOMOTIVE 650-V 30-M GAN FET WI Packaging: Tape & Reel (TR) Features: Slew Rate Controlled, Status Flag Package / Case: 52-VQFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 26mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V Current - Output (Max): 38A Ratio - Input:Output: 1:1 Supplier Device Package: 52-VQFN (12x12) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 Type: MOSFET Configuration: Half Bridge Inverter Current: 55 A Voltage: 650 V |
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