LMG3522R030QRQSTQ1 Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET IPM 650V 55A 52-VQFN
Features: Slew Rate Controlled, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 52-VQFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: PWM
Type: MOSFET
Configuration: Half Bridge Inverter
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 26mOhm
Input Type: Non-Inverting
Voltage - Load: 650V
Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V
Current - Output (Max): 38A
Ratio - Input:Output: 1:1
Supplier Device Package: 52-VQFN (12x12)
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO
Grade: Automotive
Current: 55 A
Voltage: 650 V
Qualification: AEC-Q100
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 36.53 EUR |
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Technische Details LMG3522R030QRQSTQ1 Texas Instruments
Description: MOSFET IPM 650V 55A 52-VQFN, Features: Slew Rate Controlled, Status Flag, Packaging: Tape & Reel (TR), Package / Case: 52-VQFN Exposed Pad, Output Type: N-Channel, Mounting Type: Surface Mount, Wettable Flank, Number of Outputs: 1, Interface: PWM, Type: MOSFET, Configuration: Half Bridge Inverter, Switch Type: General Purpose, Operating Temperature: -40°C ~ 125°C (TA), Output Configuration: Low Side, Rds On (Typ): 26mOhm, Input Type: Non-Inverting, Voltage - Load: 650V, Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V, Current - Output (Max): 38A, Ratio - Input:Output: 1:1, Supplier Device Package: 52-VQFN (12x12), Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO, Grade: Automotive, Current: 55 A, Voltage: 650 V, Qualification: AEC-Q100.
Weitere Produktangebote LMG3522R030QRQSTQ1 nach Preis ab 37.21 EUR bis 53.94 EUR
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LMG3522R030QRQSTQ1 | Hersteller : Texas Instruments |
Description: MOSFET IPM 650V 55A 52-VQFNFeatures: Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) Package / Case: 52-VQFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: PWM Type: MOSFET Configuration: Half Bridge Inverter Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Low Side Rds On (Typ): 26mOhm Input Type: Non-Inverting Voltage - Load: 650V Voltage - Supply (Vcc/Vdd): 7.5V ~ 18V Current - Output (Max): 38A Ratio - Input:Output: 1:1 Supplier Device Package: 52-VQFN (12x12) Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, UVLO Grade: Automotive Current: 55 A Voltage: 650 V Qualification: AEC-Q100 |
auf Bestellung 256 Stücke: Lieferzeit 10-14 Tag (e) |
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LMG3522R030QRQSTQ1 | Hersteller : Texas Instruments |
Gate Drivers Automotive 650-V 30- m? GaN FET with inte |
auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
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