LND01K1-G

LND01K1-G Microchip Technology


20005696A.pdf Hersteller: Microchip Technology
Description: MOSFET N-CH 9V 330MA SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Supplier Device Package: SOT-23-5
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): +0.6V, -12V
Drain to Source Voltage (Vdss): 9 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 5 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.7 EUR
Mindestbestellmenge: 3000
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Technische Details LND01K1-G Microchip Technology

Description: MOSFET N-CH 9V 330MA SOT23-5, Packaging: Tape & Reel (TR), Package / Case: SC-74A, SOT-753, Mounting Type: Surface Mount, Operating Temperature: -25°C ~ 125°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330mA (Tj), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 360mW (Ta), Supplier Device Package: SOT-23-5, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): +0.6V, -12V, Drain to Source Voltage (Vdss): 9 V, Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 5 V.

Weitere Produktangebote LND01K1-G nach Preis ab 0.87 EUR bis 1.46 EUR

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LND01K1-G LND01K1-G Hersteller : Microchip Technology 20005696A.pdf Description: MOSFET N-CH 9V 330MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Supplier Device Package: SOT-23-5
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): +0.6V, -12V
Drain to Source Voltage (Vdss): 9 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 5 V
auf Bestellung 3466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.92 EUR
100+ 0.87 EUR
Mindestbestellmenge: 20
LND01K1-G LND01K1-G Hersteller : Microchip Technology 20005696A-1150149.pdf MOSFET Lateral N-Ch MOSFET Depletion-Mode
auf Bestellung 21623 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
39+1.35 EUR
45+ 1.16 EUR
100+ 1.04 EUR
Mindestbestellmenge: 39
LND01K1-G LND01K1-G Hersteller : Microchip Technology / Atmel 20005696A-1150149.pdf MOSFET Lateral N-Ch MOSFET Depletion-Mode
auf Bestellung 23800 Stücke:
Lieferzeit 315-329 Tag (e)
Anzahl Preis ohne MwSt
36+1.46 EUR
42+ 1.24 EUR
100+ 1.13 EUR
Mindestbestellmenge: 36
LND01K1-G LND01K1-G Hersteller : Microchip Technology 2754141590199257filehandler.aspxddocnameen570632.aspxddocnameen570632.pdf Trans MOSFET N-CH Si 9V 0.33A 5-Pin SOT-23 T/R
Produkt ist nicht verfügbar
LND01K1-G Hersteller : MICROCHIP TECHNOLOGY LND01.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 9V; 330mA; Idm: 0.6A; 0.36W; SOT23-5
Polarisation: unipolar
Mounting: SMD
Kind of channel: depleted
Pulsed drain current: 0.6A
Drain-source voltage: 9V
Drain current: 0.33A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Case: SOT23-5
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
LND01K1-G Hersteller : MICROCHIP TECHNOLOGY LND01.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 9V; 330mA; Idm: 0.6A; 0.36W; SOT23-5
Polarisation: unipolar
Mounting: SMD
Kind of channel: depleted
Pulsed drain current: 0.6A
Drain-source voltage: 9V
Drain current: 0.33A
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Case: SOT23-5
Kind of package: reel; tape
Produkt ist nicht verfügbar