LND150N3-G-P003 Microchip Technology
| Anzahl | Preis |
|---|---|
| 500+ | 0.76 EUR |
| 2000+ | 0.73 EUR |
| 4000+ | 0.7 EUR |
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Technische Details LND150N3-G-P003 Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 30mA (Tj), Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V, Power Dissipation (Max): 740mW (Ta), Supplier Device Package: TO-92-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V.
Weitere Produktangebote LND150N3-G-P003 nach Preis ab 0.67 EUR bis 1.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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LND150N3-G-P003 | Microchip Technology |
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
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LND150N3-G-P003 | Microchip Technology |
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R |
auf Bestellung 1945 Stücke: Lieferzeit 14-21 Tag (e) |
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LND150N3-G-P003 | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
auf Bestellung 1711 Stücke: Lieferzeit 10-14 Tag (e) |
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LND150N3-G-P003 | Microchip Technology |
MOSFETs DepletionMode MOSFET |
auf Bestellung 3314 Stücke: Lieferzeit 10-14 Tag (e) |
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LND150N3-G-P003 | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 490 Stücke Im Einkaufswagen Stück im Wert von UAH |
| LND150N3-G-P003 |
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Hersteller: Microchip Technology
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 158+ | 0.92 EUR |
| 160+ | 0.89 EUR |
| 163+ | 0.86 EUR |
| 250+ | 0.83 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.77 EUR |
| LND150N3-G-P003 |
![]() |
Hersteller: Microchip Technology
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R
auf Bestellung 1945 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 155+ | 0.93 EUR |
| 158+ | 0.89 EUR |
| 160+ | 0.84 EUR |
| 163+ | 0.8 EUR |
| 250+ | 0.75 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.67 EUR |
| LND150N3-G-P003 |
![]() |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
auf Bestellung 1711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 25+ | 0.82 EUR |
| LND150N3-G-P003 |
![]() |
Hersteller: Microchip Technology
MOSFETs DepletionMode MOSFET
MOSFETs DepletionMode MOSFET
auf Bestellung 3314 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.03 EUR |
| LND150N3-G-P003 |
![]() |
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)




