LND250K1-G Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 13MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Supplier Device Package: SOT-23 (TO-236AB)
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details LND250K1-G Microchip Technology
Description: MOSFET N-CH 500V 13MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Supplier Device Package: SOT-23 (TO-236AB), Power Dissipation (Max): 360mW (Ta), Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V, Current - Continuous Drain (Id) @ 25°C: 13mA (Tj), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote LND250K1-G nach Preis ab 0.69 EUR bis 0.86 EUR
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LND250K1-G | Microchip Technology |
MOSFETs 500V 1KOhm |
auf Bestellung 26273 Stücke: Lieferzeit 10-14 Tag (e) |
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LND250K1-G | Microchip Technology |
Description: MOSFET N-CH 500V 13MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 0V Supplier Device Package: SOT-23 (TO-236AB) Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Current - Continuous Drain (Id) @ 25°C: 13mA (Tj) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 10571 Stücke: Lieferzeit 10-14 Tag (e) |
|
| LND250K1-G |
|
Hersteller: Microchip Technology
MOSFETs 500V 1KOhm
MOSFETs 500V 1KOhm
auf Bestellung 26273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.8 EUR |
| 500+ | 0.74 EUR |
| 3000+ | 0.69 EUR |
| LND250K1-G |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 13MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Supplier Device Package: SOT-23 (TO-236AB)
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 13MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Supplier Device Package: SOT-23 (TO-236AB)
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
FET Type: N-Channel, Depletion Mode
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10571 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.71 EUR |