LND250K1-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 500V 13MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 360mW (Ta)
Supplier Device Package: SOT-23 (TO-236AB)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.71 EUR |
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Technische Details LND250K1-G Microchip Technology
Description: MOSFET N-CH 500V 13MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13mA (Tj), Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 360mW (Ta), Supplier Device Package: SOT-23 (TO-236AB), Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V.
Weitere Produktangebote LND250K1-G nach Preis ab 0.77 EUR bis 1.28 EUR
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LND250K1-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 13MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Supplier Device Package: SOT-23 (TO-236AB) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
auf Bestellung 16911 Stücke: Lieferzeit 10-14 Tag (e) |
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LND250K1-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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LND250K1-G | Hersteller : Microchip Technology |
MOSFET 500V 1KOhm |
auf Bestellung 32570 Stücke: Lieferzeit 14-28 Tag (e) |
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LND250K1-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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LND250K1-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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LND250K1-G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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LND250K1-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13mA; Idm: 30A; 0.36W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13mA Pulsed drain current: 30A Power dissipation: 0.36W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 1kΩ Mounting: SMD Kind of package: reel; tape Kind of channel: depleted Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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LND250K1-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13mA; Idm: 30A; 0.36W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13mA Pulsed drain current: 30A Power dissipation: 0.36W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 1kΩ Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
Produkt ist nicht verfügbar |