Weitere Produktangebote LSIC1MO120E0080 nach Preis ab 25.11 EUR bis 40.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
LSIC1MO120E0080 | IXYS |
 SiC MOSFETs 1200V 80mOhm SiC MOSFET |
auf Bestellung 4158 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
LSIC1MO120E0080 | Littelfuse Inc. |
Description: SICFET N-CH 1200V 39A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V |
auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
|
| LSIC1MO120E0080 |
|
Hersteller: IXYS
SiC MOSFETs 1200V 80mOhm SiC MOSFET
SiC MOSFETs 1200V 80mOhm SiC MOSFET
auf Bestellung 4158 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 37.07 EUR |
| 10+ | 25.11 EUR |
| LSIC1MO120E0080 |
|
Hersteller: Littelfuse Inc.
Description: SICFET N-CH 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V
Description: SICFET N-CH 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.34 EUR |
| 30+ | 28.37 EUR |
| 120+ | 26.33 EUR |