auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 34.2 EUR |
| 10+ | 30.38 EUR |
| 25+ | 28.35 EUR |
| 50+ | 27.47 EUR |
| 100+ | 26.58 EUR |
| 250+ | 26.21 EUR |
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Technische Details LSIC1MO120E0080 IXYS
Description: SICFET N-CH 1200V 39A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V.
Weitere Produktangebote LSIC1MO120E0080
| Foto | Bezeichnung | Hersteller | Beschreibung |
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LSIC1MO120E0080 Produktcode: 138007 |
 Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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LSIC1MO120E0080 | Hersteller : Littelfuse |
Trans MOSFET N-CH SiC 1.2KV 39A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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LSIC1MO120E0080 | Hersteller : LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 179W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 80A Power dissipation: 179W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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LSIC1MO120E0080 | Hersteller : Littelfuse Inc. |
Description: SICFET N-CH 1200V 39A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 800 V |
Produkt ist nicht verfügbar |
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LSIC1MO120E0080 | Hersteller : LITTELFUSE |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 179W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 80A Power dissipation: 179W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |