LSIC1MO120E0120
Produktcode: 183409
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Lieblingsprodukt
Hersteller:
Gehäuse: TO-247
Drain-Source-Spannung Uds, V: 1200 В
Drain-Strom Idd, A: 18 А
Durchlasswiderstand Rds(on), Ohm: 120 мОм
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1130/63
Montage: THT
Produktrezensionen
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Weitere Produktangebote LSIC1MO120E0120 nach Preis ab 22.41 EUR bis 32.71 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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LSIC1MO120E0120 | Littelfuse |
MOSFET 1200 V 120 mOhm SiC Mosfet |
auf Bestellung 1710 Stücke: Lieferzeit 10-14 Tag (e) |
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LSIC1MO120E0120 | IXYS |
MOSFET 1200 V 120 mOhm SiC Mosfet |
auf Bestellung 1684 Stücke: Lieferzeit 10-14 Tag (e) |
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LSIC1MO120E0120 | Littelfuse Inc. |
Description: SICFET N-CH 1200V 27A TO247-3 Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 20V Part Status: Active Supplier Device Package: TO-247AD Vgs(th) (Max) @ Id: 4V @ 7mA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 20V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 854 Stücke: Lieferzeit 10-14 Tag (e) |
|
| LSIC1MO120E0120 |
|
Hersteller: Littelfuse
MOSFET 1200 V 120 mOhm SiC Mosfet
MOSFET 1200 V 120 mOhm SiC Mosfet
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.32 EUR |
| 10+ | 25.57 EUR |
| 25+ | 25.3 EUR |
| 50+ | 24.75 EUR |
| 100+ | 23.1 EUR |
| 250+ | 22.82 EUR |
| 450+ | 22.41 EUR |
| LSIC1MO120E0120 |
|
Hersteller: IXYS
MOSFET 1200 V 120 mOhm SiC Mosfet
MOSFET 1200 V 120 mOhm SiC Mosfet
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.17 EUR |
| 10+ | 28.33 EUR |
| 25+ | 27.64 EUR |
| LSIC1MO120E0120 |
|
Hersteller: Littelfuse Inc.
Description: SICFET N-CH 1200V 27A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 7mA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 20V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: SICFET N-CH 1200V 27A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1125 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Active
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 7mA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 20V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 854 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.71 EUR |
| 30+ | 26.48 EUR |
| 120+ | 24.92 EUR |
| 510+ | 22.59 EUR |