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LSIC1MO120E0160

LSIC1MO120E0160 Littelfuse Inc.


littelfuse_power_semiconductor_silicon_carbide_lsic1mo120e0160_datasheet.pdf.pdf Hersteller: Littelfuse Inc.
Description: SICFET N-CH 1200V 22A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 800 V
auf Bestellung 1448 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.09 EUR
10+ 15.94 EUR
100+ 13.79 EUR
500+ 12.5 EUR
1000+ 11.46 EUR
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Technische Details LSIC1MO120E0160 Littelfuse Inc.

Description: SICFET N-CH 1200V 22A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 20V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 5mA, Supplier Device Package: TO-247AD, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 800 V.

Weitere Produktangebote LSIC1MO120E0160 nach Preis ab 14.59 EUR bis 19.69 EUR

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LSIC1MO120E0160 LSIC1MO120E0160 Hersteller : Littelfuse littelfuse_power_semiconductor_silicon_carbide_lsic1mo120e0160_datasheet.pdf.pdf MOSFET 1200 V 160 mOhm SiC Mosfet
auf Bestellung 593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.69 EUR
10+ 17.35 EUR
25+ 17.09 EUR
50+ 16.56 EUR
100+ 15 EUR
250+ 14.73 EUR
450+ 14.59 EUR
LSIC1MO120E0160 LSIC1MO120E0160 Hersteller : Littelfuse iconductor_silicon_carbide_lsic1mo120e0160_datasheet.pdf.pdf Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
LSIC1MO120E0160 LSIC1MO120E0160 Hersteller : Littelfuse iconductor_silicon_carbide_lsic1mo120e0160_datasheet.pdf.pdf Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
LSIC1MO120E0160 LSIC1MO120E0160 Hersteller : Littelfuse iconductor_silicon_carbide_lsic1mo120e0160_datasheet.pdf.pdf Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
LSIC1MO120E0160 LSIC1MO120E0160 Hersteller : LITTELFUSE LSIC1MO120E0160.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 44A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 57nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 44A
Drain-source voltage: 1.2kV
Drain current: 14A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
LSIC1MO120E0160 LSIC1MO120E0160 Hersteller : LITTELFUSE LSIC1MO120E0160.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 44A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 57nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 44A
Drain-source voltage: 1.2kV
Drain current: 14A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar