LSIC1MO120G0025 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET SIC 1200V 70A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -6V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 800 V
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Technische Details LSIC1MO120G0025 Littelfuse Inc.
Description: MOSFET SIC 1200V 70A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4V @ 30mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 800 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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LSIC1MO120G0025 | Hersteller : IXYS |
SiC MOSFETs TO247 1.2KV 70A N-CH SIC |
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