Technische Details LSIC1MO120G0025 Littelfuse
Description: MOSFET SIC 1200V 70A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 4V @ 30mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 800 V.
Weitere Produktangebote LSIC1MO120G0025
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| LSIC1MO120G0025 | Hersteller : LITTELFUSE |
 LSIC1MO120G0025 THT N channel transistors |
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LSIC1MO120G0025 | Hersteller : Littelfuse Inc. |
Description: MOSFET SIC 1200V 70A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 50A, 20V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 30mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 495 pF @ 800 V |
Produkt ist nicht verfügbar |
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LSIC1MO120G0025 | Hersteller : IXYS |
SiC MOSFETs TO247 1.2KV 70A N-CH SIC |
Produkt ist nicht verfügbar |