LSIC2SD120N80PA IXYS
Hersteller: IXYS
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 123.39 EUR |
| 10+ | 109.72 EUR |
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Technische Details LSIC2SD120N80PA IXYS
Description: DIODE MOD SIC 1200V 75A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 75A (DC), Supplier Device Package: SOT-227B - miniBLOC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote LSIC2SD120N80PA nach Preis ab 125.14 EUR bis 136.54 EUR
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LSIC2SD120N80PA | Hersteller : Littelfuse | SiC Schottky Diodes 1200V/80A SIC SBD IN SOT-227 |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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| LSIC2SD120N80PA | Hersteller : Littelfuse |
 Schottky Barrier Diode |
Produkt ist nicht verfügbar |
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LSIC2SD120N80PA | Hersteller : LITTELFUSE |
Description: LITTELFUSE - LSIC2SD120N80PA - SiC-Schottky-Diode, Zweifach, 240 nC, SOT-227B Periodische Spitzen-Sperrspannung: 1.2 Kapazitive Gesamtladung: 240 Anzahl der Pins: 4 Pins Qualifizierungsstandard der Automobilindustrie: - Bauform - Diode: SOT-227B Diodenkonfiguration: Zweifach Sperrschichttemperatur Tj, max.: 175 Kontinuierlicher Durchlassstrom If: 150 Produktpalette: - SVHC: No SVHC (17-Jan-2022) |
Produkt ist nicht verfügbar |
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| LSIC2SD120N80PA | Hersteller : LITTELFUSE |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 40Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 40A x2 Case: SOT227B Max. forward voltage: 2.1V Max. forward impulse current: 0.3kA Electrical mounting: screw Features of semiconductor devices: Schottky Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| LSIC2SD120N80PA | Hersteller : LITTELFUSE |
Category: Diode modules Description: Module: diode; double independent; 1.2kV; If: 40Ax2; SOT227B; screw Type of semiconductor module: diode Semiconductor structure: double independent Max. off-state voltage: 1.2kV Load current: 40A x2 Case: SOT227B Max. forward voltage: 2.1V Max. forward impulse current: 0.3kA Electrical mounting: screw Features of semiconductor devices: Schottky Technology: SiC |
Produkt ist nicht verfügbar |