MASMLG10CA Microsemi HI-REL [MIL]
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Lieferzeit 21-28 Tag (e)
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Technische Details MASMLG10CA Microsemi HI-REL [MIL]
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB, Type of diode: TVS, Peak pulse power dissipation: 3kW, Max. off-state voltage: 10V, Breakdown voltage: 11.7V, Max. forward impulse current: 176.4A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: DO215AB, Mounting: SMD, Leakage current: 5µA, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MASMLG10CA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MASMLG10CA | Hersteller : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 176.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO215AB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MASMLG10CA | Hersteller : Microsemi | ESD Suppressors / TVS Diodes Uni-Directional TVS |
Produkt ist nicht verfügbar |
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MASMLG10CA | Hersteller : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 3kW; 11.7V; 176.4A; bidirectional; ±5%; DO215AB Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 176.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO215AB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |