Technische Details MAX15012DASA+ Maxim Integrated
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, DigiKey Programmable: Not Verified, Current - Peak Output (Source, Sink): 2A, 2A, Gate Type: N-Channel MOSFET, Number of Drivers: 2, Driven Configuration: Half-Bridge, Channel Type: Independent, Rise / Fall Time (Typ): 65ns, 65ns, Supplier Device Package: 8-SOIC-EP, High Side Voltage - Max (Bootstrap): 175 V, Input Type: Inverting, Non-Inverting, Voltage - Supply: 8V ~ 12.6V, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tube.
Weitere Produktangebote MAX15012DASA+
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MAX15012DASA+ | Analog Devices Inc./Maxim Integrated |
 Description: IC GATE DRVR HALF-BRIDGE 8SOICDigiKey Programmable: Not Verified Current - Peak Output (Source, Sink): 2A, 2A Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 65ns, 65ns Supplier Device Package: 8-SOIC-EP High Side Voltage - Max (Bootstrap): 175 V Input Type: Inverting, Non-Inverting Voltage - Supply: 8V ~ 12.6V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tube |
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| MAX15012DASA+ |
|
Hersteller: Analog Devices Inc./Maxim Integrated
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 65ns, 65ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 175 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 8V ~ 12.6V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 2A, 2A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 65ns, 65ns
Supplier Device Package: 8-SOIC-EP
High Side Voltage - Max (Bootstrap): 175 V
Input Type: Inverting, Non-Inverting
Voltage - Supply: 8V ~ 12.6V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH