Produkte > KAGA FEI AMERICA, INC. > MB85R256FPF-G-BNDE1
MB85R256FPF-G-BNDE1

MB85R256FPF-G-BNDE1 Kaga FEI America, Inc.

MB85R256F-DS501-00011-6v0-E.pdf
Hersteller: Kaga FEI America, Inc.
Description: IC FRAM 256KBIT PARALLEL 28SOP
Memory Interface: Parallel
Write Cycle Time - Word, Page: 150ns
Part Status: Obsolete
Supplier Device Package: 28-SOP
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tray
Memory Organization: 32K x 8
Access Time: 150 ns
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Technische Details MB85R256FPF-G-BNDE1 Kaga FEI America, Inc.

Description: IC FRAM 256KBIT PARALLEL 28SOP, Memory Interface: Parallel, Write Cycle Time - Word, Page: 150ns, Part Status: Obsolete, Supplier Device Package: 28-SOP, Memory Format: FRAM, Technology: FRAM (Ferroelectric RAM), Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 256Kbit, Mounting Type: Surface Mount, Package / Case: 28-SOIC (0.342", 8.69mm Width), Packaging: Tray, Memory Organization: 32K x 8, Access Time: 150 ns.