Produkte > KAGA FEI AMERICA, INC. > MB85R256GPF-G-BND-ERE1

MB85R256GPF-G-BND-ERE1 Kaga FEI America, Inc.

Hersteller: Kaga FEI America, Inc.
Description: IC FRAM 256KBIT PARALLEL
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Packaging: Tape & Reel (TR)
Memory Organization: 32K x 8
Access Time: 150 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 150ns
Part Status: Obsolete

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Technische Details MB85R256GPF-G-BND-ERE1 Kaga FEI America, Inc.

Description: IC FRAM 256KBIT PARALLEL, Memory Format: FRAM, Technology: FRAM (Ferroelectric RAM), Voltage - Supply: 2.7V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 256Kbit, Packaging: Tape & Reel (TR), Memory Organization: 32K x 8, Access Time: 150 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 150ns, Part Status: Obsolete.