Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > MBR1035-E3/45
MBR1035-E3/45

MBR1035-E3/45 Vishay General Semiconductor - Diodes Division

mbr10xx.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Technische Details MBR1035-E3/45 Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 35V 10A TO220AC, Current - Reverse Leakage @ Vr: 100 µA @ 35 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A, Voltage - DC Reverse (Vr) (Max): 35 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.