MBR10H100HE3/45 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO220AC
Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details MBR10H100HE3/45 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO220AC, Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.