Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > MBR16H50-E3/45
MBR16H50-E3/45

MBR16H50-E3/45 Vishay General Semiconductor - Diodes Division

MBR(F,B)16H35%20-%2016H60.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 16A TO220AC
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Technische Details MBR16H50-E3/45 Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 50V 16A TO220AC, Current - Reverse Leakage @ Vr: 100 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 730 mV @ 16 A, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 16A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.