Produkte > TAIWAN SEMICONDUCTOR CORPORATION > MBR25150CTHC0G
MBR25150CTHC0G

MBR25150CTHC0G Taiwan Semiconductor Corporation

MBR2535CT%20SERIES_K2104.pdf
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 25A TO220AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AB
Current - Average Rectified (Io) (per Diode): 25A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details MBR25150CTHC0G Taiwan Semiconductor Corporation

Description: DIODE ARR SCHOT 150V 25A TO220AB, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 100 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 25 A, Voltage - DC Reverse (Vr) (Max): 150 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-220AB, Current - Average Rectified (Io) (per Diode): 25A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.