Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > MBR25H35CT-E3/45
MBR25H35CT-E3/45

MBR25H35CT-E3/45 Vishay General Semiconductor - Diodes Division

MBR(F,B)25HxxCT_Rev_6-12-13.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 35V TO220AB
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MBR25H35CT-E3/45 Vishay General Semiconductor - Diodes Division

Description: DIODE ARRAY SCHOTTKY 35V TO220AB, Current - Reverse Leakage @ Vr: 100 µA @ 35 V, Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A, Voltage - DC Reverse (Vr) (Max): 35 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: TO-220-3, Current - Average Rectified (Io) (per Diode): 15A, Diode Configuration: 1 Pair Common Cathode, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.