
MBRF835CT Taiwan Semiconductor Corporation

Description: 8A, 35V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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Technische Details MBRF835CT Taiwan Semiconductor Corporation
Description: 8A, 35V, PLANAR SCHOTTKY, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 8A, Supplier Device Package: ITO-220AB, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 35 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A, Current - Reverse Leakage @ Vr: 100 µA @ 35 V.
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MBRF835CT | Hersteller : Taiwan Semiconductor |
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